Integrated circuit, has semiconductor substrate, and set of layers forming electronic circuit, where substrate includes hole that is open on one rear face opposed to set of layers, and depth is provided at specific thickness of circuit

摘要

The circuit (1) has a semiconductor substrate (4), and a set of layers (3) forming an electronic circuit. The substrate includes a hole (7) that is open on one rear face (6) opposed to the set of layers. A depth (P) is provided at 50% thickness (e) of the integrated circuit, where the depth of the hole lies between 20 and 120 micrometers, i.e. preferably between 40 and 100 micrometers. The hole presents a wall that forms an angle that ranges between 60 and 90 degrees with regard to the face opposed to the set of layers. An independent claim is also included for a method for manufacturing an integrated circuit.