发明名称 |
SYSTEM AND METHOD FOR TEMPERATURE CONTROL OF SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a system and a method for temperature control of a semiconductor wafer.SOLUTION: The semiconductor wafer is received in a first chamber which is in a first pressure level. A semiconductor wafer is in a first temperature and heated up to a second temperature by a first heating module. On the other hand, a pressure level in the first chamber is reduced from the first pressure level to a second pressure level. Then, the semiconductor wafer is supplied to a support element of a second chamber which maintains a third pressure level closer to the second pressure level than the first pressure level, and the support element is in a third temperature closer to the second temperature than the first temperature. |
申请公布号 |
JP2014039001(A) |
申请公布日期 |
2014.02.27 |
申请号 |
JP20120280174 |
申请日期 |
2012.12.05 |
申请人 |
APPLIED MATERIALS ISRAEL LTD |
发明人 |
SHAVIT LAVY;KRAUS RAFI;ITZAK YAIR;SAMUEL NACKASH;BELENKY YURI |
分类号 |
H01L21/02;H01L21/027;H01L21/683 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|