| 摘要 |
A semiconductor device includes a semiconductor substrate with a cell region, a second pad region, and a first pad region between the second pad region and the cell region, a first buried gate buried in a trench of the semiconductor substrate, and extended from the cell region to the second pad region, and a second buried gate buried in the trench of the semiconductor substrate, disposed over and spaced apart from an upper part of the first buried gate, and extended from the cell region to the first pad region. |
