| 摘要 |
A semiconductor storage apparatus provides a large capacity phase-change memory possessing high speed operation, low electrical current, and high-reliability. During the period that a read-out start signal is activated in the memory region control circuit and the block of pairs of sense-latch and write driver is performing the verify read in the upper section memory region; the write enable signals in the memory region control circuit are activated and the block of pairs of sense-latch and write driver perform rewrite operation of the data in the lower section memory region. This type of operation allows cancelling out the time required for the verify read and the time required for the time-division write operation by performing the verify read in one memory region, while performing time-division rewrite in other memory region, to achieve both higher reliability rewrite operation along with suppressing the rewrite operation peak electrical current. |
