| 摘要 |
<p>The transistor is provided with: an insulating substrate (1); gate electrodes (2, 4) disposed on the substrate; a gate insulating film (3) formed to cover the gate electrodes; an organic semiconductor film (5) formed over the gate insulating film; and a source electrode (6) and drain electrode (7) arranged in contact with the organic semiconductor film. The gate electrode includes a main gate electrode (2) arranged in a region opposed to the channel region between the source electrode and the drain electrode of the organic semiconductor film, and a pair of auxiliary gate electrodes (4) arranged in regions respectively opposed to the source electrode and the drain electrode to either side of the main gate electrode. The main gate electrode and the auxiliary gate electrodes are electrically isolated from one another. Contact resistance between the source/drain electrodes and the organic semiconductor film can be controlled to a low level, even during driving in a low-voltage region, and the operating frequency can be sufficiently improved due to the shorter channel length.</p> |
