发明名称 |
METHOD OF MANUFACTURING TRANSISTOR, TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE |
摘要 |
Embodiments of the present invention provide a method for manufacturing a transistor, a transistor, an array substrate and a display device. The method comprises: forming a first source/drain metal layer on a substrate; forming an insulating layer above the first source/drain metal layer; forming a gate metal layer on the insulating layer; forming a gate insulating layer on the gate metal layer; forming a semiconductor layer above the gate insulating layer; forming an etching blocking layer on the semiconductor layer; forming a second source/drain metal layer above the etching blocking layer; forming an insulating layer above the second source/drain metal layer. |
申请公布号 |
US2014054701(A1) |
申请公布日期 |
2014.02.27 |
申请号 |
US201213876630 |
申请日期 |
2012.11.28 |
申请人 |
BOE TECHNOLOGY GROUP., LTD.;BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
JIANG CHUNSHENG |
分类号 |
H01L27/088;H01L29/66 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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