| 发明名称 |
Power Semiconductor Devices, Structures, and Related Methods |
| 摘要 |
Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types. |
| 申请公布号 |
US2014054684(A1) |
申请公布日期 |
2014.02.27 |
| 申请号 |
US201313770011 |
申请日期 |
2013.02.19 |
| 申请人 |
MAXPOWER SEMICONDUCTOR, INC.;MAXPOWER SEMICONDUCTOR, INC. |
发明人 |
DARWISH MOHAMED N.;ZENG JUN;BLANCHARD RICHARD A. |
| 分类号 |
H01L29/40;H01L29/78 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
