| 摘要 |
A MEMS device includes a first oxide film that is laminated on a main surface of a wafer substrate, a lower-layer wire portion that is provided on the first oxide film, a nitride film that is laminated so as to cover the first oxide film and the lower-layer wire portion, a sidewall portion that is laminated on the nitride film and is formed in a frame shape, a cavity portion that is partitioned by the sidewall portion, and a MEMS structure that is disposed in the cavity portion, in which the nitride film includes a through hole reaching the lower-layer wire portion, and in which the MEMS structure is electrically connected to the lower-layer wire portion by an electrical connection portion provided in the through hole. |
