| 摘要 |
1,247,892. Field effect memory devices. R.C.A. CORPORATION. 27 Sept., 1968 [17 Oct., 1967], No. 45991/68. Heading H1K. A field effect semiconductor device exhibiting a memory comprises a layer of insulation not more than 25 Š thick, which is less than the tunnelling distance, disposed on a semiconductor body and overlain by a charge storage layer. One embodiment consists of an IGFET with a 25 Š thick layer of silica over the channel and a silicon nitride charge storage layer on top of it, with a gate electrode disposed on the nitride. Alternatively the nitride is replaced by a metal or polycrystalline silicon layer insulated from the gate electrode by a layer of silica. In another embodiment an annular gate structure of either of the above types is disposed over the PN junction of a planar diode. The IGFETs exhibit two stable valves of threshold voltage according to whether a positive or negative write in pulse was applied to the gate and the gated diode exhibits two stable valves of reverse breakdown voltage and capacitance. The theory of operation is discussed. |
