| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a trench gate structure which can successfully overlap a gate electrode against a source layer while inhibiting increase in channel resistance.SOLUTION: A semiconductor device 1 comprises: a structure in which an ntype drain layer 3, a p type channel layer 4 and an ntype source layer 5 are sequentially stacked; an SiC substrate 2 from which the ntype source layer 5 is exposed on a surface 6; a gate trench 7 which pierces from the surface 6 of the SiC substrate 2 through the ntype source layer 5 and the p type channel layer 4 with a deepest part reaching the ntype drain layer 3; a gate insulation film 10 formed so as to follow an inner surface of the gate trench 7 and the surface 6 of the SiC substrate 2; and a gate electrode 14 embedded in the gate trench 7 via the gate insulation film 10. In the semiconductor 1, a plane surface insulation film 13 is formed thicker in comparison with a lateral face insulation film 12. |
