Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer

摘要

Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a cap layer-free method for forming a silicide is provided. The method includes the following steps. A semiconductor material selected from: silicon and silicon germanium is provided. At least one silicide metal is deposited on the semiconductor material. The semiconductor material and the at least one silicide metal are annealed at a temperature of from about 400° C. to about 800° C. for a duration of less than or equal to about 10 milliseconds to form the silicide. A FET device and a method for fabricating a FET device are also provided.