发明名称
摘要 A quantitative evaluation method, a method for manufacturing a silicon wafer, and a silicon wafer manufactured by the method, enabling more efficient evaluation of the concentration of atomic vacancies existing in a silicon wafer. The quantitative evaluation method includes steps of: oscillating, in a state in which an external magnetic field is applied to a silicon wafer (26) while keeping the silicon wafer (26) at a constant temperature, an ultrasonic wave pulse and receiving a measurement wave pulse obtained after the ultrasonic wave pulse is propagated through the silicon wafer (26) for detecting a phase difference between the ultrasonic wave pulse and the measurement wave pulse; and calculating an elastic constant from the phase difference. The external magnetic field is changed to calculate the elastic constant corresponding to a change in the external magnetic field for evaluating a concentration of atomic vacancies in the silicon wafer (26).
申请公布号 JP5425914(B2) 申请公布日期 2014.02.26
申请号 JP20110529866 申请日期 2010.08.19
申请人 发明人
分类号 H01L21/66;G01N29/00;G01N29/04 主分类号 H01L21/66
代理机构 代理人
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