| 摘要 |
Provided is a light-emitting device including a semiconductor substrate of a first conductivity type, a semiconductor multilayer reflection mirror of the first conductivity type, formed on the semiconductor substrate, a first semiconductor layer of the first conductivity type, formed on the semiconductor multilayer reflection mirror, a second semiconductor layer of a second conductivity type, formed on the first semiconductor layer, a third semiconductor layer of the first conductivity type, formed on the second semiconductor layer, a fourth semiconductor layer of the second conductivity type, formed on the third semiconductor layer, a first electrode formed on a rear surface of the semiconductor substrate, and a second electrode formed on the fourth semiconductor layer, wherein the semiconductor multilayer reflection mirror includes a first selectively oxidized region and a first conductive region adjacent to the first oxidized region, and the first conductive region electrically connects the semiconductor substrate and the first semiconductor layer. |
