METHOD FOR EVALUATING PROPERTY OF ELECTRONIC DEVICE USING SPECTROSCOPIC ELLIPSOMETRY

摘要

Provided is a method for evaluating the property of an electronic device using a spectroscopic ellipsometry. The method comprises the steps of: preparing a target including a substrate and a thin film layer arranged on the substrate; radiating polarized light to the target using a spectroscopic ellipsometer and obtaining the measured ellipsometry values of the light reflected from the target; calculating the thickness of the thin film layer by modeling the measured values; extracting a complex dielectric functional graph of the thin film layer using the thickness of the thin film layer and obtaining the information on the structural defects of the thin film layer using the complex dielectric functional graph; and evaluating the property of an electronic device to apply the thin film layer using the information on the structural defects of the thin film layer. Accordingly, the present invention can conveniently and easily evaluate the entire property of the device using only one thin film capable of forming a part of the electronic device. [Reference numerals] (S100) Prepare a target including a substrate and a thin film layer; (S200) Obtain measured ellipsometry values; (S300) Calculate the thickness of the thin film layer; (S400) Obtain the information on the structural defects of the thin film layer; (S500) Evaluate the property of an electronic device from the information on the structural defects