发明名称 Nanolayer deposition process
摘要 A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.
申请公布号 US8658259(B2) 申请公布日期 2014.02.25
申请号 US20100732825 申请日期 2010.03.26
申请人 NGUYEN TUE;NGUYEN TAI DUNG;ASM INTERNATIONAL N.V. 发明人 NGUYEN TUE;NGUYEN TAI DUNG
分类号 C23C16/00;C23C16/44;C23C16/455;C23C16/56;H05H1/00 主分类号 C23C16/00
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