发明名称 Semiconductor memory device, semiconductor package and system having stack-structured semiconductor chips
摘要 A memory module includes a first multichip package including a first master chip and a first plurality of slave chips, and a second multichip package, the second multichip package including a second master chip and a second plurality of slave chips. A first through via passes through the first master chip and electrically connects to the first master chip to provide a supply voltage to the first master chip. A second through via passes through the first master chip without being electrically connected to provide a supply voltage to the first master chip. A first set of additional through vias pass through respective ones of the first plurality of slave chips and electrically connect to the respective ones of the first plurality of slave chips, wherein the second through via and first set of additional through vias are aligned to form a first stack of through vias.
申请公布号 US8659136(B2) 申请公布日期 2014.02.25
申请号 US20100712284 申请日期 2010.02.25
申请人 YOUN SUNPIL;OH KWANYOUNG;SAMSUNG ELECTRONICS CO., LTD. 发明人 YOUN SUNPIL;OH KWANYOUNG
分类号 H01L23/48 主分类号 H01L23/48
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