发明名称 PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a piezoelectric element and a piezoelectric device manufactured stably and having excellent piezoelectric characteristics by controlling the local structure (bonding state of atom) of a piezoelectric layer with high accuracy.SOLUTION: In a piezoelectric element 10 where at least a lower electrode layer 3, a piezoelectric layer 4 represented by a general formula (NaKLi)NbO(0<x&le;1, 0<y&le;1, 0&le;Z&le;0.2, x+y+z=1), and an upper electrode layer 5 are laminated on a substrate 1, the piezoelectric layer 4 has a crystal structure of pseudo-cubic, tetragonal, prismatic crystal, monoclinic crystal, or rhombohedral crystal, or a state where the crystal structures mentioned above coexist. The difference between a maximum value and a minimum value of energy at the Na-K absorption end of the piezoelectric layer 4 in the film thickness direction, measured by electron energy loss spectrometry or X-ray absorption fine structure analysis, is 0.8 eV or less.
申请公布号 JP2014036035(A) 申请公布日期 2014.02.24
申请号 JP20120174837 申请日期 2012.08.07
申请人 HITACHI METALS LTD 发明人 SUENAGA KAZUFUMI;SHIBATA KENJI;WATANABE KAZUTOSHI;NOMOTO AKIRA;HORIKIRI FUMIMASA
分类号 H01L41/187;B06B1/06;C04B35/00;C23C14/08;H01L41/08;H01L41/09;H01L41/18;H01L41/22 主分类号 H01L41/187
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