| 摘要 |
<p>The present invention is to improve the property of a transparent thin film transistor by using metal thin film as a diffusion source and doping a source and a drain region with a high concentration impurity. According to the present invention, A ZnO based active layer is formed. A ZnO based active layer is stacked on the ZnO based active layer. A thermal process is carried out in order to form an n-type thin film doped with a high concentration impurity. A source and a drain electrode are formed on the n-type thin film. Therefore, the transparent thin film transistor is manufactured.</p> |
