| 摘要 |
<p>This technology relates to a method for manufacturing a non-volatile memory device. The method for manufacturing a non-volatile memory device according to this technology comprises the steps of: forming a structure in which first interlayer insulating films and sacrificial layers are alternately laminated on a substrate; forming a main channel hole through the structure; sequentially forming a pre-charge trap film, a tunnel insulating film, and a channel layer along the inner wall of the main channel hole; forming a trench through the sacrificial layers at both sides of the main channel hole; and forming an oxide insulating film by oxidizing the pre-charge trap film inside the first interlayer insulating film. According to this technology, the reliability of the non-volatile memory device can be improved by separating charge trap films by memory cell and preventing the spread of the charge.</p> |
