| 摘要 |
Methods of programming memory devices include biasing each data line of a plurality of data lines to a program inhibit voltage; discharging a first portion of data lines of the plurality of data lines, wherein the first portion of data lines of the plurality of data lines are coupled to memory cells selected for programming; and applying a plurality of programming pulses to the memory cells selected for programming while biasing a remaining portion of data lines of the plurality of data lines to the program inhibit voltage. |
