发明名称 |
SIC SINGLE CRYSTAL, SIC WAFER, AND SEMICONDUCTOR DEVICE |
摘要 |
<p>An SiC single crystal having at least one orientation region where a basal plane dislocation has a high linearity and is oriented to three crystallographically-equivalent <11-20> directions, and an SiC wafer and a semiconductor device which are manufactured from the SiC single crystal. The SiC single crystal can be manufactured by using a seed crystal in which the offset angle on a {0001} plane uppermost part side is small and the offset angle on an offset direction downstream side is large and growing another crystal on the seed crystal.</p> |
申请公布号 |
KR20140022074(A) |
申请公布日期 |
2014.02.21 |
申请号 |
KR20137033382 |
申请日期 |
2012.05.16 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA;DENSO CORP. |
发明人 |
GUNJISHIMA ITARU;URAKAMI YASUSHI;ADACHI AYUMU |
分类号 |
C30B29/36;H01L29/161 |
主分类号 |
C30B29/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|