发明名称 |
INTEGRATED CIRCUIT HAVING IMPROVED RADIATION IMMUNITY |
摘要 |
An integrated circuit having improved radiation immunity is described. The integrated circuit comprises a substrate; an n-well formed on the substrate; a p-well formed on the substrate; and a p-tap formed in the p-well adjacent to the n-well, wherein the p-tap extends between circuit elements formed in the n-well and circuit elements formed in the p-well, and is coupled to a ground potential. A method of forming an integrated circuit having improved radiation immunity is also described. |
申请公布号 |
US2014048887(A1) |
申请公布日期 |
2014.02.20 |
申请号 |
US201213587823 |
申请日期 |
2012.08.16 |
申请人 |
HART MICHAEL J.;KARP JAMES;XILINX, INC. |
发明人 |
HART MICHAEL J.;KARP JAMES |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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