| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element of a normally-off type that has low threshold value and allows easily controlling the threshold value.SOLUTION: A nitride semiconductor element 1 comprises: a p-type nitride semiconductor layer 4; a source layer 5 and a drain layer 6 formed in the p-type nitride semiconductor layer 4 so as to be spaced apart from each other and composed of a pair of n-type semiconductor layers; a first insulating film 11 formed on a surface of the p-type nitride semiconductor layer 4 in a region between the source layer 5 and the drain layer 6 and composed of SiN; and a gate electrode 17 formed above the first insulating film 11 in the region between the source layer 5 and the drain layer 6. A second insulating film 12 is formed so as to be interposed between the first insulating film 11 and a source electrode 15, between the first insulating film 11 and a drain electrode 16, and between the first insulating film 11 and the gate electrode 17. |
