SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A high-mobility material layer manufacturing method comprises: forming multiple precursors in and/or on a substrate (1); and performing pulse laser processing, so that the multiple precursors react with each other to form a high-mobility material layer. Also provided is a semiconductor device manufacturing method, comprising: forming a cushioning layer (3) on an insulating substrate; forming a first high-mobility material layer (6A) on the cushioning layer by using the high-mobility material layer manufacturing method; forming a second high-mobility material layer (6B) on the first high-mobility material layer (6A) by using the high-mobility material layer manufacturing method; and forming a groove isolation (8) in the first and the second high-mobility material layers and defining an active region. In the semiconductor manufacturing method, by adjusting the pulse quantity and energy density in the laser processing, a multi-layer high-mobility material is formed on the insulating substrate for many times and is used as a channel region of the device, thereby effectively enhancing the device carrier mobility and further improving the device drive capability.