| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor laser element capable of successfully blocking stray light, while controlling recess formation positions with high reproducibility.SOLUTION: The manufacturing method of a semiconductor laser element comprises the steps of: preparing a semiconductor structure sequentially having an active layer 12 and a second semiconductor layer 13 on a first semiconductor layer 11; forming a striped first protective film 20 on the second semiconductor layer; forming a ridge by using the first protective film as a mask; forming a second protective film 40 from a ridge top face to a top face of the second semiconductor layer located on both sides of the ridge, with the first protective film left on the ridge; forming, on the second protective film, a third protective film provided with an opening which straddles the ridge; removing, while leaving a portion of the second protective film formed on a lateral face of the ridge by using the third protective film as a mask, the rest of the second protective film formed in other regions; and forming, on both sides of the ridge, recesses spaced apart from the ridge by using, as a mask, the first protective film left on the ridge top face, the second protective film left on the ridge lateral face and the portion of the second protective film corresponding to a formation region of the third protective film. |
