| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of producing a photoelectric conversion element having high photoelectric conversion efficiency by heating a light absorption layer to a high temperature, and a photoelectric conversion element manufactured by this method.SOLUTION: A metallic reverse side electrode layer is formed on a substrate and a light absorption layer is formed on top of it by a sputtering method. The light absorption layer is a CIS based compound semiconductor. However, the light absorption layer immediately after deposition, which contains Cu, In and Se atoms to constitute CIS though, does not have a CIS compound completely formed therein, nor does it have a crystalline structure. Flash light in irradiation time of 0.1 millisecond to 100 millisecond inclusive is irradiated upon the light absorption layer while in this state. Flash light irradiation for an extremely short time makes it possible to heat only the light absorption layer to a high temperature exceeding the quality alteration temperature of the base material thereof, without heating the base material to above the quality alteration temperature. Thus, the compound making and crystallization of the atoms accumulated in the light absorption layer during the deposition process is facilitated, making it possible to product a photoelectric conversion element having high photoelectric conversion efficiency. |
