| 摘要 |
A nonvolatile memory element includes: a first electrode; a second electrode; and a variable resistance layer comprising a metal oxide positioned between the first electrode and the second electrode. The variable resistance layer includes: a first oxide layer having a resistivity rhox, on the first electrode; a second oxide layer having a resistivity rhoy (rhox<rhoy), on the first oxide layer; a third oxide layer having a resistivity rhoz (rhoy<rhoz), on the second oxide layer; and a localized region that is positioned in the third oxide layer and the second oxide layer to be in contact with the second electrode and not to be in contact with the first oxide layer, and is, in resistivity, lower than the third oxide layer and different from the second oxide layer. |
