SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A gate electrode (50) includes a polysilicon film (51) in contact with a gate insulating film (41), a barrier film (52) provided on the polysilicon film (51), a metal film (53) provided on the barrier film (52) and made of refractory metal. An interlayer insulating film (42) is arranged so as to cover the gate insulating film (41) and the gate electrode (50) provided on the gate insulating film (41). The interlayer insulating film (42) has a substrate contact hole (SH) partially exposing a silicon carbide substrate (30) in a region in contact with the gate insulating film (41). A interconnection (71) is electrically connected to the silicon carbide substrate (30) through the substrate contact hole (SH) and is electrically insulated from the gate electrode (50) by the interlayer insulating film (42).