| 摘要 |
PROBLEM TO BE SOLVED: To raise the dynamic range of an image sensor without complicating its manufacturing process and drive control and without incurring degradation in pixel characteristic.SOLUTION: Provided is a CCD type solid state image sensor 1A in which a plurality of sensor units 3 for converting incident light from the subject into electricity to capture an image are disposed in two-dimensional form, wherein the plurality of sensor units 3 are composed of a first sensor unit (sensor unit 3 for pixel A) and a second sensor unit (sensor unit 3 for pixel B) which are alternately disposed, and the charge storage time of the second sensor unit (sensor unit 3 for pixel B) having a short charge storage time is set within the charge storage time of the first sensor unit (sensor unit 3 for pixel A) having a long charge storage time. In the CCD type solid state image sensor 1A where the plurality of sensor units 3 are reset after ejecting their charges to the substrate side, a high concentration P well region 8 is formed within a P well region 7 directly below an N diffusion layer of the first sensor unit 3 (sensor unit 3 for pixel A). |
