发明名称 |
Method for fabricating semiconductor device and device using same |
摘要 |
In a method for fabricating a semiconductor device, a substrate may be provided that includes: a base, an active fin that projects from an upper surface of the base and is integrally formed with the base, and a buffer oxide film pattern formed on the active fin in contact with the active fin. A first dummy gate film may be formed on the substrate to cover the buffer oxide film pattern and the first dummy gate film may be smoothed to expose the buffer oxide film pattern. A second dummy gate film may be formed on the exposed buffer oxide film pattern and the first dummy gate film. |
申请公布号 |
US8652910(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US201213438250 |
申请日期 |
2012.04.03 |
申请人 |
KANG BO-KYEONG;KIM JAE-SEOK;KIM HO-YOUNG;YOON BO-UN;YOON IL-YOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG BO-KYEONG;KIM JAE-SEOK;KIM HO-YOUNG;YOON BO-UN;YOON IL-YOUNG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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