发明名称 SEMICONDUCTOR WAFER COMPOSED OF MONOCRYSTALLINE SILICON AND METHOD FOR PRODUCING IT
摘要 Disclosed are a semiconductor wafer with monocrystal silicon and a generating method thereof. The present invention relates to the semiconductor wafer with the monocrystal silicon and the generating method thereof. The semiconductor wafer comprises a DZ area and an area having a BMD defect. The DZ area is extended from a front side of the semiconductor wafer to a bulk of the semiconductor wafer without the BMD defect. The area having the BMD defect is additionally extended from the DZ area to the bulk of the semiconductor wafer. The generating method comprises a step for pulling silicon single crystal according to a czochralski method; a step for processing single crystal to form a monocrystal substrate wafer with silicon; a step for rapidly heating and cooling the substrate wafer; a step for slowly heating the substrate wafer; and a step for maintaining the substrate during a predetermined period at a predetermined temperature.
申请公布号 KR20140020188(A) 申请公布日期 2014.02.18
申请号 KR20130087845 申请日期 2013.07.25
申请人 SILTRONIC AG 发明人 MUELLER TIMO;KISSINGER GUDRUN;KOT DAWID;SATTLER ANDREAS
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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