| 摘要 |
The present disclosure relates to a method of manufacturing a semiconductor light-emitting device, which is characterized by including the steps of: forming a branch electrode electrically communicating with a second semiconductor layer; and forming a nonconductive reflection layer made of multilayered dielectric film, on the branch electrode, to reflect light coming out of an active layer to a first semiconductor layer that is disposed toward a growth substrate and to cover the second semiconductor layer, wherein: the nonconductive reflection layer includes the bottommost layer formed by chemical vapor deposition and at least two layers stacked on the bottommost layer, which are formed by physical vapor deposition, and a thickness of the bottommost layer is greater than a height of each of the at least two layers; and an electrical connection electrically communicating with the branch electrode is formed by penetrating the nonconductive reflection layer. |
