| 摘要 |
A light emitting device according to an embodiment comprises: a first conductive semiconductor layer ; a second conductive semiconductor layer; and an activating layer located between the first conductive semiconductor layer and the second conductive semiconductor layer, and including a plurality of barrier layer and well layers arranged alternately each other, wherein the activating layer is composed of a first region that are adjacent to the first conductive semiconductor layer, and a second region that are adjacent to the second conductive semiconductor layer. The thickness of the barrier layer on the first region is thinner than there on the second region. |
