ULTRATHIN GROUP II-VI SEMICONDUCTOR LAYERS, GROUP II-VI SEMICONDUCTOR SUPERLATTICE STRUCTURES, PHOTOVOLTAIC DEVICES INCORPORATING THE SAME, AND RELATED METHODS

摘要

Disclosed are ultrathin layers of group II-VI semiconductors, group II-VI semiconductor superlattice structures, photovoltaic devices incorporating the layers and superlattice structures and related methods. The superlattice structures comprise an ultrathin layer of a first group II-VI semiconductor alternating with an ultrathin layer of at least one additional semiconductor, e.g., a second group II-VI semiconductor, or a group IV semiconductor, or a group III-V semiconductor.