发明名称 A method for manufacturing graphene quantum dot and graphene quantum dot manufactured by the same
摘要 PURPOSE: A manufacturing method of graphene quantum dots is provided to control the size and shape of graphene quantum dots and to reduce process time and process steps, thereby improving process efficiency. CONSTITUTION: A manufacturing method of graphene quantum dots comprises a step of forming a graphene of at least one layer on a catalyst metal film(S100); a step of transferring the graphene to a substrate by separating the graphene from the catalyst metal film(S200); a step of arranging a plurality of nanospheres on the surface of the graphene to form a nanosphere layer(S300); a step of etching the graphene by mask-etching the nanosphere layer(S400); and a step of removing the nanosphere layer. [Reference numerals] (S100) Form graphene; (S200) Transfer the graphene; (S300) Form a nanosphere layer; (S400) Etch the graphene; (S500) Remove the nanosphere layer
申请公布号 KR101361132(B1) 申请公布日期 2014.02.13
申请号 KR20110115377 申请日期 2011.11.07
申请人 发明人
分类号 B82B3/00;C09K11/00 主分类号 B82B3/00
代理机构 代理人
主权项
地址