发明名称 |
MONOLITHIC MULTI-CHANNEL ADAPTABLE STT-MRAM |
摘要 |
A monolithic multi-channel resistive memory includes at least one first bank associated with a first channel and tuned according to first device attributes and/or first circuit attributes. The memory also includes at least one second bank associated with a second channel and tuned according to second device attributes and/or second circuit attributes. |
申请公布号 |
US2014043890(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201213571576 |
申请日期 |
2012.08.10 |
申请人 |
KANG SEUNG H.;ZHU XIAOCHUN;QUALCOMM INCORPORATED |
发明人 |
KANG SEUNG H.;ZHU XIAOCHUN |
分类号 |
G11C11/16;H01L21/02 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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