III-NITRIDE ENHANCEMENT MODE TRANSISTORS WITH TUNABLE AND HIGH GATE-SOURCE VOLTAGE RATING

摘要

A semiconductor device includes an enhancement mode GaN FET (102) with a depletion mode GaN FET (104) electrically coupled in series between a gate node (120) of the enhancement mode GaN FET and a gate terminal (116) of the semiconductor device. A gate node (122) of the depletion mode GaN FET is electrically coupled to a source node (106) of the enhancement mode GaN FET and to a source terminal (108) of the semiconductor device, a drain node (110) of the enhancement mode GaN FET is electrically coupled to a drain terminal (112) of the semiconductor device, and a drain node (114) of the depletion mode GaN FET is electrically coupled to the gate terminal (116) of the semiconductor device.