| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory unit enabling high speed operation and preventing a circuit area from increasing.SOLUTION: A memory unit 1 includes: a memory cell array 300 having a plurality of memory cells 301; a common source line 115 to which each source of the plurality of memory cells 301 is commonly connected; and a second electrical connection path for further connecting between the common source line 115 and ground potential by erasure state memory cells 302 when the common source line 115 forms a first electrical connection path to be connected to the ground potential. |
