发明名称 RESIST UNDERLAY FILM-FORMING COMPOSITION FOR LITHOGRAPHY INCLUDING CARBONYL GROUP-CONTAINING CARBAZOLE NOVOLAC
摘要 PROBLEM TO BE SOLVED: To provide a resist underlay film-forming composition having heat resistance to be used for a lithography process in the manufacture of a semiconductor device.SOLUTION: The resist underlay film-forming composition comprises a polymer containing a structural unit expressed by formula (1). In formula (1), A represents a structure having carbazole; B represents a structure having an aromatic ring; C represents a structure having a hydrogen atom, an alkyl group or an aromatic ring, and B and C may mutually form a ring; and the combined structure of A, B and C includes 1 to 4 carboxyl groups or their salts or carboxylate groups. A method for manufacturing a semiconductor device is provided, the method including steps of: forming an underlay film of the resist underlay film-forming composition on a semiconductor substrate; forming a hard mask thereon; further forming a resist film; forming a resist pattern by irradiation with light or an electron beam and by development; and etching and processing the substrate.
申请公布号 JP2014029435(A) 申请公布日期 2014.02.13
申请号 JP20120170442 申请日期 2012.07.31
申请人 NISSAN CHEM IND LTD 发明人 SOMEYA YASUNOBU;HASHIMOTO KEISUKE;SHINJO TETSUYA;NISHIMAKI HIROKAZU;KARASAWA RYO;SAKAMOTO RIKIMARU
分类号 G03F7/11;C08G12/26;G03F7/26;G03F7/40;H01L21/027 主分类号 G03F7/11
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