| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which inhibits malfunction of a transistor caused by remaining of an insulation film.SOLUTION: A semiconductor device manufacturing method comprises: a process of burying an insulation film in a first hole formed from a first surface of a semiconductor substrate so as not to pierce the substrate and performing a heat treatment; a process of forming a mask on the first surface of the semiconductor substrate to form element isolation regions on the first surface; a process of etching a second surface which is a rear face with respect to the first surface of the semiconductor substrate; and a process of forming a second hole so as to pierce the semiconductor substrate from the second surface to the first surface and burying a conductive film to form a through electrode. In addition, the semiconductor device manufacturing method comprises: forming a mask film thicker than a dent in the first surface of the semiconductor substrate, which is dented by a certain height due to shrinkage of the insulation film caused by the heat treatment, or planarizing the surface of the semiconductor substrate so as to eliminate the dent. |
