SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Provided is a semiconductor device manufacturing method for improving a side wall mask. In the semiconductor device manufacturing method, a barrier layer (2) and a sacrificial layer (3) are formed; by adopting a chemical mechanical polishing (CMP) process, parts of quite different left and right sides on the top portion of a side wall (4) are ground off, and the approximately rectangular part of the bottom portion of the side wall (4) is left and is used as a mask to carry out a subsequent side wall mask technology; in this manner, an undesired result occurring on the subsequent etching due to morphologic asymmetry of the side wall (4) may be reduced as far as possible.