发明名称 |
MAGNETORESISTANCE SENSOR WITH PERPENDICULAR ANISOTROPY |
摘要 |
A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistance as a function of applied magnetic field and is tunable to vary the direction of the sensing layer magnetization to be in-plane, canted, or out-of-plane. |
申请公布号 |
WO2014025914(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
WO2013US53996 |
申请日期 |
2013.08.07 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
KHALILI AMIRI, PEDRAM;ZENG, ZHONGMING;WANG, KANG L. |
分类号 |
H01L43/08;G01N27/72;G01R33/09 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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