CONTACTS-FIRST SELF-ALIGNED CARBON NANOTUBE TRANSISTOR WITH GATE-ALL-AROUND

摘要

A method of fabricating a semiconducting device is disclosed. A carbon nanotube is deposited on a substrate of the semiconducting device. A first contact on the substrate over the carbon nanotube. A second contact on the substrate over the carbon nanotube, wherein the second contact is separated from the first contact by a gap. A portion of the substrate in the gap between the first contact and the second contact is removed.