发明名称 |
METHOD OF MAKING STRUCTURE HAVING A GATE STACK |
摘要 |
A method includes removing a first portion of a gate layer of a structure. The structure includes a drain region, a source region, and a gate stack, and the gate stack includes a gate dielectric layer, a gate conductive layer directly on the gate dielectric layer, and the gate layer directly on the gate conductive layer. A drain contact region is formed on the drain region, and a source contact region is formed on the source region. A conductive region is formed directly on the gate conductive layer and adjacent to a second portion of the gate layer. A gate contact terminal is formed in contact with the conductive region. |
申请公布号 |
US2014045310(A1) |
申请公布日期 |
2014.02.13 |
申请号 |
US201314058523 |
申请日期 |
2013.10.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHUANG HARRY-HAK-LAY;SONG MING-HSIANG;CHEN KUO-JI;ZHU MING;CHEN PO-NIEN;YOUNG BAO-RU |
分类号 |
H01L21/28;H01L21/283;H01L21/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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