SUBSTRATE FOR HIGH-RESOLUTION ELECTRONIC LITHOGRAPHY AND CORRESPONDING LITHOGRAPHY METHOD

摘要

The invention relates to high-energy (50 keV or more) electron beam lithography. According to the invention, the layer to be lithographed is supported by a supporting structure that includes a substrate 10 (made of silicon, for example) and an intermediate layer 22 made of a porous material having a density lower than that of the non-porous material, said material having a low atomic number, lower than 32 and preferably lower than 20, and made of silicon or carbon nanotubes, in particular. Said structure reduces the influence of the back-scattered electrons on the high-resolution lithographed patterns.