| 摘要 |
A semiconductor memory device includes a memory cell block formed over a first memory cell region and a second memory cell region defined on a semiconductor substrate, and a voltage supply circuit configured to apply an operating voltage to gate lines of a plurality of memory cells included in the memory cell block, wherein a first air gap disposed between the gate lines in the first memory cell region has a smaller size than a second air gap disposed between the gate lines in the second memory cell region. |
