| 摘要 |
A nonvolatile semiconductor memory device is provided with an MRAM chip including a magnetoresistive effect element having a reference layer whose magnetizing direction is set, a memory layer whose magnetizing direction is variable, and a nonmagnetic layer between these layers, and an enclosure having a thermal insulation area that covers part or the whole of the MRAM chip and prevents thermal fluctuation of the magnetization of the reference layer or memory layer. |
