| 摘要 |
A TFT for an LCD device and a method for manufacturing the same are provided to improve the aperture ratio and response rate, by forming nano wire semiconductor layer on a channel region which are aligned to a specific direction. A gate electrode(20) is formed on a substrate(10). An insulating layer(40) is formed on the front side of the substrate having the gate electrode. Aligning electrodes(30a,30b) are formed on the insulating layer facing the upper area of the gate electrode, and defines a channel region. The self align single layered thin film(90) having surfactant is formed to expose the channel region. Nano wire dispersion solution is coated on the substrate. The electric field is formed on the queue between electrode. A nano wire semiconductor layer(54) aligned facing a specific direction are selectively formed on the channel region by electric field between the aligning electrodes. |
