发明名称 METHOD FOR CREATING A CRYSTALLINE AREA OF METAL, IN PARTICULAR IN AN INTEGRATED CIRCUIT
摘要 The method comprises affixing a thin sheet of crystal (8) onto metal (6) of same type as the sheet but amorphous or of small grain size, deposited in trenches of a substrate (1) to form interconnect lines for example. Annealing progressively imposes the crystalline structure of the sheet onto the lines. When the crystal (8) is removed, highly conductive crystalline lines are obtained since the grains thereof have been greatly enlarged.
申请公布号 EP2449584(B1) 申请公布日期 2014.02.12
申请号 EP20100726545 申请日期 2010.07.01
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 CAYRON, CYRIL;MAITREJEAN, SYLVAIN
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
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