| 摘要 |
<p>A switch device using a crossbar memory array having a nonvolatile memory device includes a semiconductor layer made of semiconductor having the I-V characteristic of negative resistance, a lamination body where the semiconductor layer and an insulating layer are stacked, and a pair of electrodes for bonding the lamination body. [Reference numerals] (1) Semiconductor film(chalcogenide); (2) Insulation film; (4,5) Electrode layer</p> |
